OPTICAL FAULT LOCALIZATION SYSTEM

SEMICAPS SOM

SCOBIC Image
The single contact optical beam induced current (SCOBIC) technique overcomes the limitation of OBIC which requires contacts to both sides  of the junction for imaging and characterization. SCOBIC needs only one contact, usually the substrate, to image and characterize all the junctions that are connected directly or indirectly to the contact



TBIP Image
The patented TBIP technique overcomes the limitations of conventional laser induced techniques using TIVA and OBIRCH by introducing an inductor to achieve voltage bias and voltage detection. Dwell time control together with pulsing and lock-in detection result in better localization  accuracy and higher sensitivity



SDL Image
The Soft Defect Localization (SDL) technique uses the tester as a  detector of laser induced effects. At each pixel location, the tester is  programmed to run relevant portion of the test program for a specified  number of cycles. The pass-fail data is then used to construct the  SDL image for fault localization



DReM Image
The Differential Resistance Monitor (DReM) is a patented dc  coupled amplifier which provides voltage bias and voltage detection. This amplifier provides higher sensitivity and reduces the distortions in the images from conventional ac coupled amplifier.






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